中文摘要：

本文提出可集成自提取结终端的0．35μm150V—BCD（双极一互补金属氧化物半导体一双重扩散金属氧化物半导体）全套新型高压工艺．利用此工艺研制出100V场致发光用高低侧驱动芯片，并提出了基于双极器件BC（双极集电极）结短路自提取结终端新工艺与新结构，既可满足场致发光高压驱动芯片应用，又能取代传统采用氧化扩散工艺的P-ISO（P型隔离结构）传统隔离结构，显著简化了工艺和提高了芯片的高集成度，确保片内集成的低电阻率VDN—MOS／LDPMOS（N型垂直双扩散金属氧化物半导体场效应晶体管／P型横向扩散金属氧化物半导体场效应晶体管）高压驱动模块与低压逻辑控制模块在100V高压脉冲交替工作状况下无负电位、EMMI（微光显微镜）等寄生现象出现．

英文摘要：

A high voltage BCI）（Bipolar-CMOS-DMOS）technology by using self-extracted JTE（Junction Termination Exten- sion）lxench isolation based on 0.35gin standard CMOS（Complementary Metal Oxide Semiconductor）process has been developed for LCD（ Liquid Crystal Display） backlight application. In this technology, HV （ High Voltage） circuit block, including low cost VDN- MOS（ Vertical Double Diffused N-MOS ） and LDPMOS （ Laterally Diffused P-MOS ） with resurf principle, and LV （ Low Voltage） block are integrated together. Advanced deep trench isolation technology which has higher integration than conventional P-type isola- tion is firstly implemented to protect LV block from HV block and sustain the d v/dt, d i/dt effect with self-extracted function. The breakdown voltage is above 150V. Finally,it is shown that the performance of designed IC driver can satisfy the EL（Electrolumi- nescent Lamps）lamp application with frequency at least 400Hz of the switch signal and the power supply is about 100V.For the simplicity of the silicon technology, the cost is saved.