中文摘要：

The impact of nitridation and sulfur passivation for In0.53Ga0.47 As surfaces on the Al/Al2O3/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis,calculating the Dit and △Nbt values,and analyzing the interface traps and the leakage current.The results showed that both of the methods could form a passivation-layer on the InGaAs surface.The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region,and the best hysteresis characteristics and good Ⅰ-Ⅴ properties were presented.Also the samples with（NH4）2Sx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6×1011cm-2eV-1.

英文摘要：

The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.