中文摘要：

A novel radio frequency（RF） switch device has been successfully fabricated using InGaAs metaloxide-semiconductor field-effect transistor（MOSFET） technology.The device showed drain saturation currents of 250 mA/mm,a maximum transconductance of 370 mS/mm,a turn-on resistance of 0.72 mΩ·mm2 and a drain current on-off(Ion/Ioff) ratio of 1×106.The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained.The proposed In0.4Ga0.6As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz.The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively.This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application.

英文摘要：

A novel radio frequency （RF） switch device has been successfully fabricated using InGaAs metal- oxide-semiconductor field-effect transistor （MOSFET） technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/ram, a turn-on resistance of 0.72 mx2.mm2 and a drain current on-off （Ionloll） ratio of 1 x 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application.