中文摘要：

With recently developed In N epitaxy via a controlling In bilayer, spectroscopic ellipsometry(SE) measurements had been carried out on the grown In N and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope(SEM). Insight into the film quality of In N and the lattice constant were gained by X-ray diffraction(XRD). By fitting the SE, the thickness of the In N film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 e V, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence(CL). The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices.

英文摘要：

With recently developed In N epitaxy via a controlling In bilayer, spectroscopic ellipsometry（SE） measurements had been carried out on the grown In N and the measured ellipsometric spectra were fitted with the Delta Psi2 software by using a suitable model and the dispersion rule. The thickness was measured by a scanning electron microscope（SEM）. Insight into the film quality of In N and the lattice constant were gained by X-ray diffraction（XRD）. By fitting the SE, the thickness of the In N film is consistent with that obtained by SEM cross-sectional thickness measurement. The optical bandgap of InN was put forward to be 1.05 e V, which conforms to the experimental results measured by the absorption spectrum and cathodoluminescence（CL）. The refractive index and the extinction coefficient of interest were represented for InN, which is useful to design optoelectronic devices.