位置：成果数据库 > 期刊 > 期刊详情页
Defect Suppression in AlN Epilayer Using Hierarchical Growth Units
  • ISSN号：1932-7447
  • 期刊名称：Journal of Physical Chemistry C
  • 时间：2013.7.11
  • 页码：14158-14164
  • 相关项目：高Al组分AlGaN应变量子结构制备与特性研究
作者： Li, Jinchai|Chen, HangYang|Li, Shuping|Kang, Junyong|
同期刊论文项目
高Al组分AlGaN应变量子结构制备与特性研究
期刊论文 21
同项目期刊论文
Quantum state engineering with ultra-short-period (AlN)(m)/(GaN)(n) superlattices for narrowband dee
Ethanol assisted formation of aligned MWCNT bundles on nanostructured ZnO surface
Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
High Mg effective incorporation in Al-rich AlxGa1 (-) N-x by periodic repetition of ultimate V/III r
Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
Ethanol induced formation of graphene fractions suspended in acetonitrile
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocki
分布式布拉格反射与小面积金属接触复合三维电极结构的AlGaN基紫外LEDs设计
Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and
高Al组分AlGaN多量子阱结构材料发光机制探讨
Optical properties of InN studied by spectroscopic ellipsometry
Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations