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Materials Design on the Origin of Gap States in a High-κ/GaAs Interface
  • 时间：0
  • 分类：TN304.23[电子电信—物理电子学] TP336[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术]
  • 作者机构：[1]Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA, [2]College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
  • 相关基金：This work was supported by the National Natural Science Foundation of China （11304161, 11104148, and 51171082）, the Tianjin Natural Science Foundation （13JCYBJC41100 and 14JCZDJC37700）, the National Basic Research Program of China （973 Program） （2014CB931703）, Specialized Re- search Fund for the Doctoral Program of Higher Education （20110031110034）, and the Fundamental Research Funds for the Central Universities. Kyeongjae Cho was supported by the Global Frontier Center for Multiscale Energy Systems at Seoul National University in Korea. We thank the technology support from the Texas Advanced Computing Center （TACC） at the University of Texas at Austin （http：//www.tacc.utexas. edu） for providing computing resources.
作者： Weichao Wang[1,2], Cheng Gong[1], Ka Xiong[1], Santosh K. C.[1], Robert M. Wallace[1], Kyeongjae Cho[1]
关键词： 设备接口, 材料设计, 砷化镓, 电介质薄膜, 高介电常数, 界面结合, HFO2, 起源, high-mobility device, high-κ/Ⅲ-Ⅴ interface, interfacial gap states, first-principle calculations
中文摘要：

Correspondence author. E-mail： kjcho@utdallas.edu

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