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Influence of base resistance on extracting thermal resistance for SiGe HBTs
  • ISSN号：1096-4290
  • 期刊名称：International Journal of RF and Microwave Computer
  • 时间：2012
  • 页码：353-358
  • 相关项目：高电子迁移率晶体管毫米波建模和可靠性研究
作者： B.Han, T.Zhou, X.Xu, P.Li, J.Gao|
同期刊论文项目
高电子迁移率晶体管毫米波建模和可靠性研究
期刊论文 28 会议论文 5 著作 1
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