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The effect of the gate-drain distance on high frequency and noise performance for AlGaN/GaN HEMT
  • ISSN号：0895-2477
  • 期刊名称：Microwave and Optical Technology Letters
  • 时间：2015.9
  • 页码：2020-2023
  • 相关项目：高电子迁移率晶体管毫米波建模和可靠性研究
作者： Shen, Li|Chen, Bo|Sun, Ling|Gao, Jianjun|
同期刊论文项目
高电子迁移率晶体管毫米波建模和可靠性研究
期刊论文 28 会议论文 5 著作 1
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