中文摘要：

先用120keV的碳离子注入非晶二氧化硅a：SiO2薄膜，再用能量为1754MeV的Xe离子辐照。注碳量为5．0×10^16—8．6×10^17ion／cm^2，Xe离子辐照剂量为1．0×10^11和5．0×10^11ion／cm^2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明，Xe离子辐照引起了注碳a：SiO2中Si—C，C—C，Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时，Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较，增强的Si—C键的形成，预示着辐照可引起注碳a：SiO2样品中的SiC结构相变。

英文摘要：

Amorphous silicon-dioxide （a：SiO2） films were firstly implanted at room temperature （RT） with 120 keV C-ions to doses ranging from 5.0 × 10^16 to 8.6 × 10^17 ion/cm^2, and then the C-doped a：SiO2 films were irradiated at RT with 1 754 MeV Xe ions to 1.0 × 10^11 and 5.0 × 10^11 ion/cm^2, respectively. The information of new tex- ture formation in the C-doped SiO2 films after high-energy Xe ion irradiation was investigated using micro-FTIR measurements. The obtained results showed that Si--C, C--C, Si--O--C bonds as well as CO and CO2 molecules were formed in the C-doped a-SiO2 films after Xe ion irradiation. Furthermore, Xe-ion irradiation induced a plenteous formation of Si--C bonds in the high dose C-ion implanted a：SiO2 films. Compared with the C-implanted sampies without Xe-ion irradiation and the low dose C-implanted samples with Xe-ion irradiation, the enhanced and plenty of Si--C bond formation implied that the phase of SiC structures may be produced by Xe-ion irradiation in the high dose C-ion implanted a：SiO2 films.