中文摘要：

光助电化学刻蚀技术是目前获取高深宽比微纳结构的重要方法之一。由于其制作成本低、三维结构形貌可光控实现而受到重视。从实际应用出发,对Lehmann光照模型和电流密度经验公式进行了修正,并从理论和实验上研究了光照对电化学刻蚀过程和结构形貌的影响。着重分析了光照红移带来的正面效果和负面影响。理论分析和实验均证明,采用提出的修正模型,可以方便地实现对厚度为400～500μm的Si片深刻蚀,并可在刻蚀深度为150μm的情况下,实现壁厚在0.2μm到数微米的控制,Si片刻蚀面的直径可达5英寸（125 mm）或更大。为该技术的实现提供了修正的理论模型和实用化的工艺技术。

英文摘要：

The technology of photo-assisted electrochemical etching is one of the most important methods on fabrication of microstructure with high aspect ratio and is taking more attention because of low cost of production and photo-controlled 3D pattern.Influence of illumination on the process and feature of electrochemical etching is studied theoretically and experimentally,and on the basis of above studying Lehmann illumination mold and the current density formula are modified considering practical application.The positive and negative impacts on the accurate pattern generation by red-shift illumination are analyzed.It is proved theoretically and experimentally that a depth of 400-500 μm silicon wafer and be etched easily based on above modified illumination mold,and in the case of etching depth of 150 μm,according to one of the applications,the wall thickness can be controlled in the range from 0.2 μm to a few microns at the wafer diameter of 5 inch（125 mm）or more.Therefore the modified theoretical mold and applicable techniques for silicon wafer photo-assisted electrochemical etching are provided.