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中文摘要：
SiC是一种新型的半导体材料,由于化学性质十分稳定,目前还未发现有哪种酸或碱能在室温下对其起腐蚀作用,因此,在SiC的加工工艺中常采用干法刻蚀.采用GSE 200plus刻蚀机对SiC进行刻蚀,研究了刻蚀气体、源功率RF1、射频功率RF2及腔室压强对刻蚀结果的影响,并对产生的结果进行了相关分析.提出了一种SiC ICP深刻蚀方法,对SiC深刻蚀技术具有重要的指导意义.
英文摘要：
SiC is a new type semiconductor material, because of its stable chemical properties, any acid or alkali which can corrode it at room temperature have not be found, so dry etching is often used in SiC machining. GSE 200 plus etching machine is used to etch SiC, influence of etching gas, source power RF1, radiofrequency power RF2 and chamber pressure on etching result are studied, relative analysis of generated results is carried out. A SiC ICP deep etching method is proposed, which has an important guiding significance on SiC deep etching technique.
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