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A high performance of BPhen-based white organic light-emitting devices with a dual-emitting layer an
期刊名称:Journal of Industrial and Engineering Chemistr
时间:2011.4.4
页码:675-680
相关项目:微晶硅TFT-OLED的若干基础问题的研究
作者:
Hua-Ping Lin|Fan Zhou|Jun Li|Xiao-Wen Zhang|Dong-Bin Yu|Liang Zhang|Xue-Yin Jiang|Zhi-Lin Zhang|
同期刊论文项目
微晶硅TFT-OLED的若干基础问题的研究
期刊论文 23
专利 1
同项目期刊论文
Enhanced color stability and improved performance in white organic light emitting devices by utilizi
Effects of Green Emission on the Performance of White Organic Light-Emitting Devices and Their Elect
Influence of the SiO2 gate insulator thinness to the performance and Bias –voltage stress stability
The feasible application of low-cost Al/Cu bimetal semeitransparent cathode in top-emitting organic
Efiencient fluorescence from 9,10-bis(m-tolyiphenylamino) anthacene doped into a blue matrix in Si-b
A very simple method of constructing efficient inverted top-emitting organic light emitting diode ba
SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator
Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer
White organic light-emitting diodes based on C545T doped emitting system
Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channe
Improving electrical performance and bias stability of HfInZnO-TFT with optimizing the channel thick
The Stability of IGZO-TFT with Reactive Sputtered SiOx Insulator under White Light Illumination
Influence of the InGaZnO channel layer thickness on the performance of thin film transistors
The Feasibility of Using Cu as reflective Anode in Top-Emitting Organic Light Emitting Diodes
Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistor
Feasibility of using sputtered AlOx film as gate insulator for high performance InGaZnO-TFTs
Tuning the contact resistance in organic thin-film transistors with an organic–inorganic hybrid inte
Suppression of bias stress-induced degradation of pentacene-TFT using MoOx
Enhancement of performance for blue organic light emitting devices by utilizing an adjustable chroma
用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性
N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响
Optimizing structure for constructing a highly efficient inverted top-emitting organic light-emitting diode with stable electroluminescent spectra