中文摘要：

采用N20plasma处理SiNx薄膜作为绝缘层，以室温下沉积的铟镓锌氧化物（IGZO）作为有源层制备了IGZO薄膜晶体管。与常规的IGZO-TFT相比，N2Oplasllla处理过的IGZO-TFT的迁移率由原来的4．5Cln2·V^-1·s“增加至8．1cm^2·V·s^-1，阈值电压由原来的11．5V减小至3．2V，亚阈值摆由原来的1．25V／decade减小至0．9V／decade。采用C-V方法计算了两种器件的陷阱态，结果发现N：0plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFTr的陷阱态，表明N2Oplasma处理SiNx绝缘层是一种改善IGZO-TFTll器件性能的有效方法。

英文摘要：

Indium-gallium-zinc oxide thin film transistor （IGZO-TFT） was fabricated using N20 plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT, the saturation mobility increased from 4. 5 to 8.1 e m2 · V ^-1 . s^- 1, threshold voltage reduced from 11.5 to 3.2 V, threshold swing varied from 1.25 to 0.9 V/dec. The trap states in the N20 plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N2O plasma treated SiNx film as gate insulator is an effective approach for improving IGZO-TFT performance.