中文摘要：

在制作完底电极的LaAlO3（100）衬底上，利用磁控溅射法制备了一层BaO-Nd203-Sm2O3-TiO2（BNST）系薄膜，再对薄膜进行退火处理。X线衍射仪（XRD）分析表明，经退火处理的BNST薄膜结晶效果良好。采用薄膜电容结构来实现电容的测量，主要研究了BNST薄膜电容的频率特性。阻抗分析测试和矢量网络分析测试表明，在测试频率为1MHz时，介电常数为58．3，介电损耗小于2％；在1GHz的测试频率下，介电常数为57．5，介电损耗小于3％。研究表明，制备的BNST薄膜的频率特性稳定，基本满足微波频率下使用的要求。

英文摘要：

A layer ofBaO-Nd203-Sm2O3-TiO2 （BNST） thin films were prepared by RF magnetron sputtering technique on I.aA103 （100） substrates on which the bottom electrode has been fabricated, then the films were an- nealed to improve its crystallization. X-ray diffraction （XRD） analysis showed that BNST film after annealing has good crystallization. We use plate capacitor structure to measure the frequency characteristics of capacitor. This pa- per mainly studies the BNST film capacitor＇s frequency characteristics. LCR and vector network analyzer tests shows that at the frequency of 1 MHz, the dielectric constant is 58.3, the dielectric loss is less than 2%, while at the fre- quency of 1 GHz ,the dielectric eonstant is 57.5, the dielectric loss is less than 3%. The results show that the fre- quency characteristic of prepared BNST film is stable, and basically meet the requirements for using in the micro- wave frequencies.