中文摘要：

采用射频磁控溅射法制备了Ba0.5Sr0.4TiO2（BST）薄膜，研究了基片、退火温度及膜厚对薄膜耐压特性的影响。结果显示，铝酸镧（LaAlO3）基片上制备的BST薄膜表面较平整，有较好的耐压；随着退火温度从750℃提高到850℃，BST薄膜晶粒长大，电击穿概率有所增加，750℃是一个较合理的退火温度。在优化的工艺条件下，BST薄膜耐压可达125V／μm。

英文摘要：

Ba0.6 Sr0.4 TiO3 （BST） thin films were prepared by radio-frequency magnetron sputtering method and the effect of the substrate,anneaIing temperature and film thickness on the voltage-withstand property was studied. The result shows that the BST thin films deposited on LaAIO2 substrates has smoother surface and higher voltagewithstand property. The crystalline grain size of the BST thin film become larger with the annealing temperature increased from 750 ℃ to 850 ℃ ,and the electrical breakdown probability has been increased to some extent. In our re- suits,750 ℃ is a more reasonable temperature for the films annealing. At the optimized process, BST thin film can withstand more than 125 V/μm.