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Excitonic characteristics of wurtzite InGaN staggered quantum wells for light-emitting diode applica
  • ISSN号：1359-6462
  • 期刊名称：Scripta Materialia
  • 时间：0
  • 页码：203-206
  • 相关项目：GaN基量子结构的非线性光学性质
作者： Congxin Xia, H. Zhang, S. Y. Wei, Y. Jia|
同期刊论文项目
GaN基量子结构的非线性光学性质
期刊论文 28
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