中文摘要：

利用恒电位电沉积法在以乙醇为溶剂的溶液中制备了铜铟镓硒（CIGS）薄膜.并采用扫描电子显微镜（SEM）、X 射线能谱仪（EDS）、X射线衍射仪（XRD）和紫外-可见-近红外（UV-VIS-NIR）分光光度计分别对薄膜的形貌、成分、晶体结构和吸收特性进行了表征.结果表明在-1.6 V（相对于饱和甘汞电极电位）工作电位下沉积的薄膜经450 °C退火后能够形成形貌均匀致密、结晶性良好、带隙约为1.17 eV的黄铜矿结构CuIn0.7Ga0.3Se2薄膜.实验过程中发现,以乙醇为溶剂可以有效避免在水溶液中出现的析氢现象,减小了沉积电位的限制.

英文摘要：

We prepared copper indium gallium diselenide （CIGS） thin films by potentiostatic electrodeposition in an ethanol solution. The thin films were characterized by scanning electron microscopy （SEM）, X-ray energy dispersive spectrometry （EDS）, X-ray diffraction （XRD）, and UV-visible-near infrared （UV-VIS-NIR） spectrophotometry to determine their morphology, composition, crystal structure, and absorption properties. The results show that the chalcopyrite structured Culn07Ga0.3Se2 thin films can be obtained by annealing the electrodeposited films at -1.6 V （vs SCE） at 450℃. The obtained thin film has uniform morphology, good crystallinity, and a bandgap of about 1.17 eV. We found that ethanol as a solvent can effectively avoid the hydrogen evolution phenomenon, which often occurs in aqueous solution and reduces the deposition potential limitation.