中文摘要：

优化了Ni纳米晶的制备工艺参数,得到了分布均匀,形状为球形,平均尺寸5nm,密度2×1012/cm^2的Ni纳米晶。在此基础上,制备了包含Ni纳米晶的MOS电容结构。利用高频电容-电压（C-V）和电导-电压（G-V）测试研究了其电学性能,证明该MOS电容结构的存储效应主要源于金属纳米晶的限制态。电容-时间（C-t）测试曲线呈指数衰减趋势,保留时间600s,具有较好的保留性能。

英文摘要：

The optimized process parameters for the formation of Ni nanocrystals are investigated.Ni nanocrystals with the mean size of 5 nm and density of 2×1012/cm2 are obtained.Also,the disperse and the shape of the nanocrystals are uniform and spherical.MOS capacitor structure with Ni nanocrystals embedded in gate oxide is fabricated.The electrical characteristics are investigated through high-frequency capacitance versus voltage（C-V）and conductance versus voltage（G-V）measurements,which show that the memory effect mainly originates from the confined states of metal nanocrystals, Normalized capacitance versus time （C-t） curve follows to an exponential decaying law. It is observed that the retention time is 600 s, which suggests Ni nanocrystals can provide enhanced retention performance.