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Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：O626.32[理学—有机化学;理学—化学] TN305.2[电子电信—物理电子学]
作者机构：[1]Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [2]Praxair Electronics,1555 Main Street, Indianapolis 46224, USA, [3]Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing, Clarkson University, Potsdam New York 13699, USA
相关基金：Project supported by the Center for Advanced Materials Processing （CAMP） at Clarkson University, the National Integrate Circuit Research Program of China （Grant No. 2009ZX02023-3）, the National Basic Research Program of China （Grant Nos. 2007CB935400, 2010CB934300 and 2006CB302700）, the National High Technology Development Program of China （Grant No. 2008AA031402）, the Science and Technology Council of Shanghai, China （Grant Nos. 08DZ2200700, 08JC1421700 and 09QH1402600）, and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

作者：王良咏[1,3], 刘波[1], 宋志棠[1], 刘卫丽[1], 封松林[1], 黄丕成[2], S.V Babu[3]

关键词：化学机械抛光, 氮化氧化物, 水泥浆, 吡啶, 铈基, 傅里叶变换红外光谱, 氧氮化物, 电位分析仪, chemical mechanical polishing, ceria, oxide over nitride selectivity, origin

中文摘要：

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid.The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing.By using zeta potential analyzer,particle size analyzer,horizon profilometer,thermogravimetric analysis and Fourier transform infrared spectroscopy,the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared.Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

英文摘要：

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

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