位置：成果数据库 > 期刊 > 期刊详情页
Characterization of Pt/Bi3.15Nd0.85Ti 3O12/HfO2/Si structure using a hafnium oxide as buffer layer f
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：1426-1430
  • 语言：英文
  • 相关项目：面向新型铁电DRAM的关键材料及MFIS界面特性研究
作者： Liu, Litian|Luo, Yafeng|Ren, Tianling|Han, Xueguang|Xie, Dan|
同期刊论文项目
面向新型铁电DRAM的关键材料及MFIS界面特性研究
期刊论文 13 会议论文 4 专利 3
同项目期刊论文
PZT薄膜的MOCVD制备技术
MOCVD制备PZT薄膜技术研究
Nitrogen-rich titanium nitride serving as pt-al diffusion barrier for feram application
Interface studies and electronic properties of silicon based nd-doped bismuth titanate
FABRICATION AND PROPERTIES OF METAL-PZT-METAL CAPACITORS BY LIQUID DELIVERY MOCVD
Microstructure and dielectric properties of Nd-doped bismuth titanate
Optical characterization of sr1-xbaxbi4ti4o15 graded thin films
Comparison of PbZr1-xTixO3 thin films deposited on different substrates by liquid delivery metal org
Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr 0.4Ti0.
Etching behavior and damage rejuvenation of top electrode and Bi 3:15Nd0:85Ti3O12 films applied in f
Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3 / Bi3.15 Nd0.85 Ti3 O 12 mu
The influence of film thickness and process temperature on c-axis orientation of Bi3TiTaO9 thin film