中文摘要：

A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors(RC-IGBT). Mathematical derivation and circuit simulations indicate that this modelcan explain the snap-backeffect(including primary snap-back effect,secondary snap-backeffect,and reverse snap-back effect) and hysteresis effect perfectly.

英文摘要：

A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.