中文摘要：

做 Al 的 ZnO (偶氮) 薄电影被激光脱离在不同的氧下面在 c 蓝宝石底层上种部分压力(P _O2 ) 。水晶结构，比较喜欢的取向以及这些电影的电、光的性质上的 PO2 的效果被调查。结构描述显示成长得当的电影是有 wurtzite ZnO 结构的 single-phased，显示出重要 c 轴取向。当在更高的 P _O2 。在最佳氧 10 的部分压力- 15 Pa ，偶氮的薄电影取向附生地在c蓝宝石底层上被种与( 0001 )飞机平行到底层表面， i e ，取向附生的关系是偶氮的( 000 1 )//艾尔 ₂ O ₃( 000 1 )。与增加 P _O2 , 当搬运人集中的稍微被减少时，霍尔搬运人活动性的价值显著地被增加，它在偶氮的薄电影的电的电导率导致了改进。所有这些电影比 85 % 高与光发射度是高度透明的。

英文摘要：

Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was investigated.The structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis orientation.The films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_（O2）.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A1_2O_3（000 1）.With increasing P_（O2）,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin films.All the films were highly transparent with an optical transmittance higher than 85%.