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中文摘要：
在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim（F-N）隧穿电流下的退化情况.这种退化是恒流应力和时间的函数,对恒流应力大小的依赖性更加强烈,隧道氧化层在F-N电流下的退化是注入电荷密度（Qinj）的函数.在较低Qinj下氧化层中发生正电荷俘获,在较高Qinj下发生负电荷俘获,导致栅压变化的反复.
英文摘要：
The degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress was studied using capacitors. The degradation is a function of constant current and time, which depends more on the magnitude of constant current. Thus the degradation is a strong function of injected charge density Qinj . Positive charge trapping is usually dominant at lower Qinj followed by negative charge trapping at higher Qinj, causing a reversal of gate voltage change.
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