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Charging Effect in Plasma Etching Mask of Hole Array

ISSN号：1009-0630
期刊名称：Plasma Science and Technology
时间：2013.6.6
页码：570-576
分类：TN305.7[电子电信—物理电子学] V442[航空宇航科学与技术—飞行器设计;航空宇航科学技术]
作者机构：[1]Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics,University of Science and Technology of China,Hefei 230026,China, [2]JET Plasma Equipment Design Company,Shanghai 200000,China
相关基金：supported by National Natural Science Foundation of China（Nos.11074232 and 10874160）;National Basic Research Program of China（Nos.2011CB932801 and 2012CB933702）;Ministry of Education of China（No.20123402110034）;＂111＂ project
相关项目：金属和半导体纳米结构表面定量分析方法研究

作者： Zhang Peng|Wang Jun|Sun Yang|Ding Zejun|

关键词：等离子蚀刻, 充电效应, 电场强度, 阵列, 模孔, 等离子体蚀刻, 空间分布, 膜表面, plasma etching, charging effect, hole array

中文摘要：

<正>It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching processes.This work aims to understand the mechanism behind such a shape change using particle simulation method.The distribution of electric field produced by electrons was calculated for different heights from the mask surface.It is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the surface.The spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole edge.The changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.

英文摘要：

It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching processes.This work aims to understand the mechanism behind such a shape change using particle simulation method.The distribution of electric field produced by electrons was calculated for different heights from the mask surface.It is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the surface.The spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole edge.The changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.

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