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Microstructure and texture evolution of CeO2 buffer layers fabricated via CSD method in reducing atm
  • ISSN号：0957-4522
  • 期刊名称：Journal of Materials Science: Materials in Electro
  • 时间：2014.10
  • 页码：4623-4627
  • 相关项目：氧化铈缓冲层的稳定化生长与调控机理研究
作者： Jin, L.H.|Wang, H.|Odier, P.|Zhang, Pingxiang|
同期刊论文项目
氧化铈缓冲层的稳定化生长与调控机理研究
期刊论文 22 专利 1
同项目期刊论文
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