中文摘要：

合适的衬底偏压是物理气相沉积制备cBN的必须条件,本文采用基于蒙特卡洛方法的SRIM软件对PVD过程中离子轰击衬底进行了分析,并进行了相关的实验研究。仿真与实验结果显示,随着离子轰击能量的增加,离子轰击深度和范围扩大,有利于cBN的成核与生长,但是过大的轰击能量会导致薄膜表面N与B元素的不匹配以及薄膜立方相的下降。同时,在PVD气氛中适量添加N2可以弥补薄膜表面N元素的损失,有利于提高立方相含量。

英文摘要：

The proper substrate bias voltage is the one of the most important factors for cBN deposition. The effect of substrate bias on the physical vapor deposition course was analyzed. Monte Carlo method is used to simulate the ion bombardment. The simulation and experiment results shows that with the increase of ion bombard energy, the range and depth of ion bombard increase obviously which is good for the nuclear and growth of cBN. But overlarge ion bombard will lead to the mismatching of nitrogen and boron and decrease of quality of cBN film. nitrogen lose as the ion bombard to The proper nitrogen adding to the atmosphere will make up for the increase the cubic phase of boron nitride film.