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In-situ boron and aluminum doping and their memory effects in 4H-SiC homoepitaxial layers grown by h
  • 所属机构名称：中国科学院半导体研究所
  • 会议名称：12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
  • 成果类型：会议
  • 会场：Otsu, Japan
  • 相关项目：3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
作者： Liu, Xingfang|Zeng, Yiping|Wang, Lei|Wang, Liang|Zhao, Wanshun|Zhao, Yongmei|Ji, Gang|Sun, Guosheng|
同会议论文项目
3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
期刊论文 10 会议论文 6 专利 6
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