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Fracture properties of silicon carbide thin films characterized by bulge test of long membranes
  • 所属机构名称：中国科学院半导体研究所
  • 会议名称：3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
  • 成果类型：会议
  • 会场：Sanya, China
  • 相关项目：3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
作者： Li, Jinmin|Yang, Jinling|Zhou, Wei|Yang, Fuhua|Liu, Xingfang|Sun, Guosheng|
同会议论文项目
3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
期刊论文 10 会议论文 6 专利 6
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