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Heteroepitaxial growth of 3C-SiC on Si (111) substrate using AlN as a buffer layer
  • 所属机构名称：中国科学院半导体研究所
  • 会议名称：12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
  • 成果类型：会议
  • 会场：Otsu, Japan
  • 相关项目：3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
作者： Zeng, Y.P.|Zhao, W.S.|Zhao, Y.M.|Liu, X.F.|Wang, L.|Li, J.Y.|Sun, G.S.|Li, J.M.|
同会议论文项目
3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
期刊论文 10 会议论文 6 专利 6
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