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High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
  • 所属机构名称：中国科学院半导体研究所
  • 会议名称：2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
  • 成果类型：会议
  • 会场：Beijing, China
  • 相关项目：3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
作者： Ji, Gang|Liu, Xingfang|Zhao, Wanshun|Ning, Jin|Zhao, Yongmei|Wang, Lei|Zeng, Yiping|Sun, Guosheng|
同会议论文项目
3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
期刊论文 10 会议论文 6 专利 6
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