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A high-G silicon carbide vertical capacitive micromachined accelerometer
  • 所属机构名称：中国科学院半导体研究所
  • 会议名称：2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits,
  • 成果类型：会议
  • 会场：Suzhou, China
  • 相关项目：3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
作者： Wang, Lei|Zhao, Wanshun|Sun, Guosheng|Zhao, Yongmei|Ning, Jin|Liu, Xingfang|Li, Jinmin|Yang, Ting|Zeng, Yiping|
同会议论文项目
3C-SiC自支撑衬底及其金属氧化物场效应晶体管（MOSFETs）研究
期刊论文 10 会议论文 6 专利 6
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