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An analytical model for high voltage thin-film silicon on insulator RESURF devices
  • 所属机构名称：电子科技大学
  • 会议名称：2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  • 成果类型：会议
  • 会场：Shanghai, China
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Zhang, Bo|Luo, Xiaorong|Li, Zhaoji|Fan, Jie|
同会议论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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