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A Novel High Voltage SOI LDMOS with Buried N-layer in a Self-isolation High Voltage Integrated Circu
  • 所属机构名称：电子科技大学
  • 会议名称：22nd International Symposium on Power Semiconductor Devices and ICs
  • 成果类型：会议
  • 会场：Hiroshima, JAPAN
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Udrea, Florin|Luo, Xiaorong|Wang, Yuangang|Zhang, Bo|Lei, Tianfei|
同会议论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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