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A new membrane PSOI high voltage device with a buried P+ layer
  • 所属机构名称：电子科技大学
  • 会议名称：2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  • 成果类型：会议
  • 会场：Shanghai, China
  • 相关项目：SOI高压器件荷致高场理论与新结构
作者： Zhang, Bo|Yang, Xiao-Ming|Luo, Xiao-Rong|
同会议论文项目
SOI高压器件荷致高场理论与新结构
期刊论文 34 会议论文 6 专利 7
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