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Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET
  • 所属机构名称：北京大学
  • 会议名称：2010 International Conference on Solid State Device and Materials
  • 成果类型：会议
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Shengdong Zhang|Linfeng Du|
同会议论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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