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3-D simulation of geometrical variations impact on nanoscaleFinFETs
  • 所属机构名称：北京大学
  • 会议名称：Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference
  • 成果类型：会议
  • 会场：北京
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Jinfeng Kang|Xiaoyan Liu|Ruqi Han|Shimeng Yu|Yuning Zhao|Yuncheng Song|Gang Du|
同会议论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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