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A Physical-Based Mobility Model Including STI Stress MOSFETs
  • 所属机构名称：北京大学
  • 会议名称：Silicon Nanoelectronics Workshop，2009
  • 成果类型：会议
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Gang Du|Ruqi Han|Jinfeng Kang|Xiaouyan Liu|Lei Sun|Wei Wu|
同会议论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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