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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN201[电子电信—物理电子学] O657.31[理学—分析化学;理学—化学]
  • 作者机构：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [2]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 相关基金：Project supported by the State Key Development Program for Basic Research of China （Nos. 2006CB604904, 2006CB604908） and the National Natural Science Foundation of China （Nos. 60676029, 60990315, 60625402）. The authors are sincerely grateful to Dr. Fan Zhongchao at the Engineering Research Center of Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, and Dr. Li Junjie at the Laboratory of Micro- fabrication, Institute of Physics, Chinese Academy of Sciences, for valuable discussions, and to Mrs. Hu Ying and Mrs. Liang Ping for their help and encouragement throughout the course of this work.
作者： 彭银生, 叶小玲, 徐波, 金鹏, 牛洁斌, 贾锐, 王占国
关键词： 二维光子晶体, 电感耦合等离子体, GAAS, 纳米尺度, 蚀刻, 阵列, 空气, 扫描电子显微镜, photonic crystal, GaAs, inductively coupled plasma etching, scanning electron microscopy
中文摘要：

Corresponding author. Email： cynthia@semi.ac.cn

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754