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刻蚀液中HF和H2O2的摩尔分数对Ag辅助化学刻蚀Si形貌的影响
  • ISSN号:0412-1961
  • 期刊名称:金属学报
  • 时间:2013.8.15
  • 页码:989-995
  • 分类:TM914.41[电气工程—电力电子与电力传动]
  • 作者机构:[1]沈阳大学辽宁省先进材料制备技术重点实验室,沈阳110044, [2]北京钢铁研究总院功能材料研究所,北京100081
  • 相关基金:国家自然科学基金项目51171118,辽宁省自然科学基金项目20212339和沈阳市科技基金项目F10-2051-60资助
  • 相关项目:微电解池法研究晶界的腐蚀行为和腐蚀机制
中文摘要:

采用扫描电镜和紫外-可见分光光度计研究了Ag粒子在小团聚条件下辅助化学刻蚀Si过程中,刻蚀剂HF和氧化剂H2O2的体积比对刻蚀孔隙结构和刻蚀速度的影响.结果表明,HF和H202的体积比对刻蚀Si中的孔隙生长速度和形貌有明显的影响,HF和H202的摩尔分数p=[HF]/([HF]+[H202])过低或过高均不利于孔隙的生长.当60%〈p〈80%时,Si可获得快速刻蚀,刻蚀速度为1050-1260nm/min.此时,孔隙密度高,孔径较大且相互连通,沿垂直Si表面生长.所获得的Si表面对200-1000nm波段太阳光的平均反射率可降至5.9%.此外,孔隙生长速度和形貌也与Ag颗粒的尺寸和形态密切相关.

英文摘要:

The research of silicon solar cells mainly focuses on reducing cost and improving con- version efficiency, and one of the effective methods of improving photoelectric conversion efficiency of solar cells is to decrease the reflection of incident sunlight onto the light-receiving surface. The porous Si layer can work for the antireflection of Si surfaces, which can be prepared by noble metal assisted chemical etching. In this work, the effects of HF, H202 and their volume ratio on morphology and growth of pores on single crystalline Si surface by using Ag (with a small cluster) metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The surface and cross-sectional morphologies of the porous Si surfaces were observed with field-emission scanning electron microscope. The reflectivity of the etched Si surface was measured with a UV-Vis spectrophotometer equipped with an integrating sphere accessory. The experimental results show that the growth rate and morphology of the pores formed on the Ag metallized Si surfaces are strongly de- pendent on the volume ratio of HF and H202. It is not beneficial for the pore growth when mole fraction p=[HF]/([HF]+[H202]) is too low or too high, and the etching goes well only when p is between 60%-- 80%; in this case, the pore growth rate is up to 1050 1260 nm/min, and the pores grow straightly andvertically with a relatively large pore density, pore size and connected pore net. The Si surface exhibits an average reflectivity as little as 5.9% in tile wave range of 200 1000 nm, showing that a satisfactory antireflection is obtained. Additionally, the growth rate and morphology of the pores also depend oil the size and morphology of catalyst Ag particles.

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期刊信息
  • 《金属学报》
  • 中国科技核心期刊
  • 主管单位:中国科学协术协会
  • 主办单位:中国金属学会
  • 主编:柯俊
  • 地址:沈阳文化路72号
  • 邮编:110016
  • 邮箱:shxiao@imr.ac.cn
  • 电话:024-23971286
  • 国际标准刊号:ISSN:0412-1961
  • 国内统一刊号:ISSN:21-1139/TG
  • 邮发代号:2-361
  • 获奖情况:
  • 第一、二届全国优秀科技期刊评比一等奖,第一、二、三届国家期刊奖,国家期刊方阵"双高"期刊,第一、二、三届中国科学院科技期刊评比一等奖,中国科学院优秀期刊特别奖,第一、二、三、五届中国科协优秀科技期刊评比一等奖,中国科协精品期刊工程A类、B类,第一、二、三、四、五届中国百种杰出学术期刊,首届出版政府奖
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  • 被引量:26785