中文摘要：

微电子器件的发展趋势是小型化和多功能化，这就对半导体材料的加工技术提出了更高的要求。与传统的加工技术相比，近年发展起来的贵金属粒子辅助化学刻蚀半导体材料制备微结构技术因操作简单、不需要精密设备、反应迅速和可批量生产等优点引起了国内外学者的广泛关注。本文以Si为主，详细介绍了Ag辅助化学刻蚀半导体材料的机理、反应现象及影响因素，总结了各种微结构的制备技术及其应用。此外，对Ge，Si1-xGex和GaAs等其他半导体材料的贵金属粒子辅助化学刻蚀技术也进行了综述。同时分析了贵金属粒子辅助化学刻蚀半导体目前存在的问题，并对未来的研究方向进行了展望。

英文摘要：

Semiconductors with various structural morphologies are widely used in areas of electronics, optoelectronics, photovohaics, sensors and thermoelectrics. The fabrication of solid-state micro/nanostructures has been motivated by the miniaturization and multi-functionality of microelectronic devices. Although some traditional methods can be used for texturization treatment of semiconductors, their applications are limited to some extent owing to their intrinsic disadvantages. Recently, the technologies of noble metal-assisted chemical etching （MacEtch） of semiconductors to produce micro/nanostructures have been paid much attention due to their relatively simple processes, fast reacting rate, low cost, and applicability for mass production etc. In this review, firstly, the MacEtch mechanisms, reaction phenomena and effect factors （including the depositing methods, distribution, sizes, shape of Ag particles, and the composition of etchants） of Ag-assisted chemical etching of Si semiconductor are discussed in detail. And then the fabrication technologies of various microstructures such as porous Si, Si nanostructures, silicon nanowire arrays, and quasi-ordered micro/nanostructures are introduced to highlight the salient features of MacEtch of Si, and the state-of-the-art MacEtch of other semiconductors such as Ge, Si1_xGex and GaAs is also summarized. Meantime, the potential applications of the MacEtch of semiconductors in different fields are overviewed. Finally, the current issues are analyzed and the outlook for the further research in this field is proposed.