中文摘要：

采用直流反应磁控溅射方法在AISI304不锈钢和Si（100）表面沉积了TiN薄膜，利用场发射扫描电镜、X射线衍射仪和电化学技术研究了基体温度对TiN薄膜结构与电化学性能的影响。结果表明：TiN薄膜为柱状结构，表面平整、致密，但基体温度高于300℃时膜表面存在微裂纹。薄膜为面心立方结构争TiN并存在择优取向，室温和150℃时的薄膜择优取向为（111）晶面，300℃和450℃时为（200）晶面；基体为室温时薄膜厚度为0．63μm，温度提高到150℃后膜厚增加到1μm左右，但继续升温对膜厚影响并不明显。薄膜在NaCl溶液中的腐蚀为点蚀，基体温度为150℃时的TiN薄膜具有最高的开路电位和点蚀电位以及最低的腐蚀速率，因此具有最佳的耐蚀性。

英文摘要：

TiN thin films were deposited by DC reactive magnetron sputtering on AISI 304 and Si（10O） wafer sub- strates, respectively. The effect of substrate temperature on microstructure and eleetroehemieal properties was in- vestigated by using field emission seanning electron mieroseopy, X-ray diffraction and electrochemical work station. The results show that the strueture of TiN film is columnar, and the surface of the film is flat and dense. However, some microcraeks are present on the surfaces of the films when the substrate temperatures surpass 300 ℃. XRD re- sults show that the TiN film is facial central cubic structure, and exhibits preferential orientation which is dependent on the substrate temperature applied. The preferential orientation of the thin film is （111） plane when the substrate temperature is between room temperature and 150 ℃, whereas it ehanges into （200） plane when the substrate tem- perature is between 300 ℃ and 450℃. The thickness of TiN films inereases when the substrate temperature increa- ses from room temperature to 150℃, however, it almost doesn＇t change when the substrate temperature continues to be increased. The corrosion form of the TiN films in NaCl solution is pitting, and the TiN film produced at 150 ℃ substrate temperature possesses the highest open circuit potential and pitting potential, and lowest corrosion rate, showing the best corrosion resistanee.