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Effects of high-temperature treatment on the reaction between Sn-3%Ag-0.5%Cu solder and sputtered Ni
ISSN号:0361-5235
期刊名称:Journal of Electronic Materials
时间:2012.10.1
页码:3145-3151
相关项目:基于FBAR的紫外和红外光传感器的研究
作者:
董树荣|王曦|周剑|王德苗|
同期刊论文项目
基于FBAR的紫外和红外光传感器的研究
期刊论文 36
会议论文 1
同项目期刊论文
Flexible surface acoustic wave device with AlN film on polymer substrate
A novel gate-suppression technique for ESD protection
A novel power-clamp assisted complementary MOSFET for robust ESD protection
Study of graphene field-effect transistors under electrostatic discharge stresses
Electrically tunable film bulk acoustic resonator based on Au/ZnO/Al structure
High Holding Voltage Silicon Controlled Rectifier for ESD Applications
Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD
An area-efficient LDMOS-SCR ESD protection device for the I/O of power IC application
Transparent Surface Acoustic Wave Devices on ZnO/Glass Using Al-Doped ZnO as the Electrode
Minimizing Multiple Triggering Effect in Diode-Triggered ilicon Controlled Rectifier (SCR) for ESD P
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
Film bulk acoustic resonators integrated on arbitrary substrates using a polymer support layer
UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure
Stacked zener trigger SCR for HV IC ESD protection
Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devi
Low-Capacitance SCR Structure for RF I/O Application
Discrete microfluidics based on aluminum nitride surface acoustic wave devices
Design and analysis of an area-efficient high holding voltage ESD protection device
High resolution skin-like sensor capable of sensing and visualizing various sensations and three dim
GGNMOS叉指宽度与金属布线对ESD防护性能的影响
基于ZnO/Si结构的声表面波器件设计研究
基于0.5μmBCD工艺的双向SCR结构的ESD保护设计
Investigation of the trigger voltage walk-in effect in LDMOS for high-voltage ESD protection
LDMOS器件软失效分析及优化设计
2.4GHz低噪声放大器的全芯片ESD保护设计