欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
针对双向可控硅（DDscR）在特征尺寸不断缩小的集成电路中，难以达到窄小静电放电（EsD）设计窗口的ESD防护需求，设计一种PMOS内嵌型浮栅DDSCR（GFDDSCR）ESD保护器件，并基于0．5mBipolar-CMOS-DMOS工艺进行制备．利用传输线脉冲测试研究不同关键尺寸的GFDDSCR的ESD特性及单位面积ESD防护能力，分析器件ESD特性随关键尺寸变化的规律，得到优化的GFDDSCR的结构参数．结果表明，与DDSCR的改进型结构（IBDSCR）相比，优化的GFDDSCR触发电压下降了27％，电压回滞幅度减小了53％，维持电压和失效电流基本不变，能够满足微纳米级集成电路窄小ESD设计窗口的需求．
英文摘要：
Since the dual directional silicon controlled rectifier （DDSCR） can not meet the requirement of the narrow electrostatic discharge （ESD） design window in integrated circuits with progressively decrea- sing feature sizes, an ESD protection clevice of PMOS-embedded gate-floating DDSCR （GFDDSCR） was designed and fabricated based on the 0.5 gm Bipolar-CMOS-DMOS process. The ESD characteristics of GFDDSCR devices with different key dimensions were studied by transmission line pulse testing, and their unit area ESD protection ability was calculated. The structure parameters of GFDDSCR were optimized by investigating the effects of key dimensions on the ESD characteristics. Results show that, compared with the improved bi-directional silicon controlled rectifier （IBDSCR）, the optimized GFDDSCR has a small change in the holding voltage and the failure current, a lower trigger voltage decreased by about 27%, and a narrower voltage snapback margin decreased by about 53%. As a result, the optimized GFDDSCR can meet the requirement of the narrow ESD design window in micro-nano scaled integrated circuits.
同期刊论文项目
同项目期刊论文
Electron leakage related low-temperature light emission efficiency behavior in GaN-based blue light-
Forward Current Transport Mechanism and Schottky Barrier Characteristics of a Ni/Au Contact on n-GaN
Effects of high-temperature treatment on the reaction between Sn-3%Ag-0.5%Cu solder and sputtered Ni
Minimizing Multiple Triggering Effect in Diode-Triggered ilicon Controlled Rectifier (SCR) for ESD P
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devi
期刊信息
位置：