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中文摘要：
设计并流片验证了一种0．18／．μRFCMOS工艺的2．4GHz低噪声放大器的全芯片静电放电（ESD）保护方案。对于射频（RF）I／O口的ESD防护，主要对比了二极管、可控硅（SCR）以及不同版图的：互补型SCR，经流片与测试，发现岛屿状互补型SCR对I／O端口具有很好的ESD防护综合性能。对于电源口的ESD防护，主要研究了不同触发方式的ESD保护结构，结果表明，RCMOS触发SCR结构（RCMOS—SCR）具有良好的ESD鲁棒性和开启速度。基于上述结构的全芯片ESD保护设计，RFI／O口采用岛屿状布局的互补SCR结构的ESD防护设计，该ESD防护电路引入0．16dB的噪声系数和176fF的寄生电容，在人体模型（HBM）下防护能力可达6kV；电源口采用了RCMOS—SCR，实现了5kVHBM的ESD保护能力，该设计方案已经在有关企业得到应用。
英文摘要：
The whole chip electrostatic discharge （ESD） protection for 2.4 GHz low noise amplifier （LNA） under the 0. 18 ~tm radio frequency CMOS process is proposed and verified in this paper. Complementary silicon controlled rectifier （SCR） with different layouts for RF I/O pad ESD protection is evaluated and compared with the traditional SCR and diode. Measurement results show that the island complementary SCR has good ESD protection performance. Various triggering methods used in the ESD protection structure are studied for LNA power clamp ESD protection. Results indicate that RCMOS_SCR has high robustness and turn-on speed. In the whole chip ESD protection based on the above-mentioned two structures, island complementary SCR is applied as RF I/O ESD protection, which introduce 0. 16 dB noise figure （NF） and 176 fF parasitic capacitance, at the same time it passes 6 kV human body model （HBM）. Power clamp ESD protection uses RCMOS trigger SCR, which passes 5 kV HBM. Above ESD design has been verified and applied in Fundry.
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