中文摘要：

热丝化学气相沉积（Hot filament chemical vapor deposition,HFCVD）方法制备金刚石薄膜设备简单,成本低廉,适合大面积金刚石膜的产业化生产,其中衬底温度是沉积高质量CVD金刚石膜的重要参数之一。基于此,首先分析大面积HFCVD系统的热交换过程,建立大面积HFCVD系统衬底温度场的三维有限元模型。与传统纯热辐射模型相比,本模型更加接近实际系统,并较好符合试验测定的结果。根据三维有限元模型开展对大面积HFCVD系统衬底温度场的有限元仿真研究,得到HFCVD系统衬底温度场的三维分布规律,并讨论热丝直径、热丝温度、热丝根数、热丝-衬底距离和水冷散热系数等对衬底温度大小及均匀性的影响。仿真结果表明,在适宜金刚石膜生长的参数范围内,热丝参数和衬底接触热阻对衬底温度大小有显著影响,由于衬底内部的三维热传导使得衬底温度场更加均匀,各参数对衬底温度场的均匀性影响不大。研究结果为高质量制备金刚石膜提供理论基础。

英文摘要：

The thermal exchange process in the reactor of the HFCVD system is analyzed at first. Then, the three dimensions finite element analysis （FEA） model of large-area substrate temperature field is built up. The three dimensions FEA model is more close to the actual deposition system compared with the former pure heat radiation model and its results are in good accord with the experimental results. The simulation study is carried out on the temperature distribution of large area HFCVD system based on the three dimensions FEA model. The three dimensions temperature distribution is obtained by the FEA model. The effect of the hot filament diameter, hot filament temperature, the substrate-filament distance and the water cooling parameter on the magnitude and uniformity of substrate temperature field is discussed. Simulation results show that in the range of fitting for the growth of diamond film, the hot filament parameters and contact thermal resistance of the substrate have great influence on the magnitude of the substrate temperature. Because of the effect three dimensions thermal conduction of substrate, the temperature field is more uniform than those in pure heat radiation system and all of the deposition parameters have little effect on the uniformity of the substrate temperature. All the results provide the basis for high quality preparation of diamond film.