对AlInGaP红色发光二极管(LED)芯片的发光特性进行了测试分析,在注入强度相等的条件下,EL与PL形状相似,但存在差异,对其光致发光(PL)和电致发光(EL)特性进行了测试分析,研究结果表明,EL与PL有着相同的产生机理,影响其发光谱的因素完全相同;发光光谱之间的差异并不是注入方式的差异,而是源于载流子的不同注入方式给LEDpn结温度带来的不同影响。
The luminescence characteristics at room temperature of AIInGaP red light-emitting diodes(LEDs) are measured and analyzed.The factors influencing the luminescence are investigated to reveal the internal relations between photoluminescence(PL) with photo absorption and electroluminescence(EL) through current injection.Under identical injection intensities,the normalized spectra of PL and EL exhibit obvious similarities in shape and apparent differences in spectral characteristic values.The analysis results show that the mechanism of production and influencing factors of PL and EL are both identical,and the differences are derived from the specific junction temperatures in distinct injection way but have nothing to do with self injection ways.