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中文摘要：
基于0.35μm CSMC CMOS工艺设计并流片了一款典型的带隙基准电压源芯片,输出不随温度变化的高精度基准电压。电路包括核心电路、运放和启动电路三部分。芯片在3.3V供电电压,-40oC到80oC的温度范围内进行测试,结果显示输出电压波动范围为1.2128V～1.2175V,温度系数为32.2 ppm/oC。电路的版图面积为135μm×236μm,芯片大小为1 mm×1 mm。
英文摘要：
A typical bandgap voltage reference based on a 0.35 μm CSMC CMOS technology is designed and fabri-cated. The overall bandgap architecture is optimized to achieve high accuracy temperature independent voltage reference. The design consists of the bandgap core circuit,op-amp,and start-up circuit. The test results show that the bandgap reference circuit provides reference voltage from 1.2128V to 1.2175V with 3.3V power supply when temperature ranges from-40 oC to 80 oC,and the temperature coefifcient is 32.2 ppm/oC. The total layout area including dummy structures is 135 μm×236 μm,and the die area is 1 mm×1 mm.
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Leakage current, active power, and delay analysis of dynamic dual V-t CMOS circuits under P-V-T fluc
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