中文摘要：

首先通过减小垒前阱的厚度消除了负阻区的＂台阶区＂,提高负阻区的阻值为-7.916Ω,并通过加压测试RTD（共振隧穿二极管）的力电耦合灵敏度,使其灵敏度由原来的5.5 mA/g增大到7 mA/g,优化了RTD作为MEMS传感器敏感单元的灵敏度,同时也通过增大RTD结构的台面积大小,有效的消除了负阻区的＂台阶区＂,并使其负阻区的阻值增大为-0.06Ω,提高了MEMS传感器敏感单元RTD结构的灵敏度。

英文摘要：

The ＂bench area＂ in the negative resistance area was eliminated by reducing the thickness of the well,and the resistance of the negative resistance was improved to-7.916Ω.Then,the force-electrical coupling effect of RTD（Resonant Tunnel Diodes）was tested by the pressure system.As the result,the sensitivity of RTD as the MEMS sensor sensitive unit was increased from 5.5 mA/g to 7 mA/g.As well as,the ＂bench area＂ eliminates as increasing the size of launch region of RTD structure.At the same time,its negative resistance increases to 0.06 Ω.Finally,the sensitivity of RTD structure as the unit of MEMS sensors was improved.