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中文摘要：
设计加工了一种GaAs基高电子迁移率晶体管（HEMT）嵌入式微加速度传感器结构,通过软件仿真和实验测试相结合的方法,研究了所设计的微结构在平行于HEMT生长方向上（Z方向）不同加速度作用下敏感单元HEMT的力电耦合特性。实验结果表明：GaAs基HEMT微加速度传感器在其低量程范围内（0～15gn）敏感单元HEMT的力电耦合系数较稳定,且其力电耦合系数为10-8数量级,比常规Si压阻式加速度传感器的力电耦合系数10-10高出2个数量级。
英文摘要：
A kind of high electron mobility transistor（HEMT） embedded micro-acceleration transducer structure GaAs-based is designed and manufactured.By simulation and experiments,electro-mechanical characteristics of HEMT sensitive unit is studied under action of different acceleration parallel to the HEMT growth direction（Z direction）.The experimental results show that the sensitive unit HEMT electro-mechanical coupling coefficient is stable in the low range（0~15 gn） of GaAs-based HEMT micro-acceleration transducer,which is 10-8and two orders higher than electro-mechanical coupling coefficient 10-10 of conventional Si piezoresistive acceleration transducer.
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