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Study on Lubricating Behavior in Chemical Mechanical Polishing
  • ISSN号：1013-9826
  • 期刊名称：Key Engineering Materials
  • 时间：2011.6.6
  • 页码：243-247
  • 相关项目：耦合能量超精密加工SiC单晶基片的机理与工艺研究
作者： J.X. Su, J.X. Du, X.L.Liu|
同期刊论文项目
耦合能量超精密加工SiC单晶基片的机理与工艺研究
期刊论文 17 专利 3
同项目期刊论文
Research on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) Si Surface Based on Abrasiv
Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding
Formation mechanism of non-uniformity on material removal in chemical mechanical polishing based on
Study on Contact Forms in Wafer Chemical Mechanical Polishing in Nanomachining
硬脆晶体基片化学机械抛光材料去除非均匀性形成机制研究
Design of the temperature signal wireless receiver and display system on polishing interface in chem
Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive
Influence of lapping parameters on 6H-SiC Crystal Substrate (0001) C surface based on diamond partic
Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior
Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Al
固结磨料研磨SiC晶片亚表面损伤截面显微检测技术
Design of CMP slurry in CMP SiC crystal substrate (0001) Si surfacebased on alumina (Al2O3) abrasive
Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abras
Design of detection system of temperature signal on polishing interface in CMP semiconductor materia
硅片加工表面层损伤检测技术的试验研究
Material removal rate of 6H-SiC crystal substrate CMP using an aluminaAl2O3 abrasive